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On the capacitance of metal/thin oxide/semiconductor structures with localized oxide states

โœ Scribed by A. Nannini; P.E. Bagnoli


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
229 KB
Volume
32
Category
Article
ISSN
0038-1101

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In this paper we present results concerning the modeling of oscillations in the I-V g characteristics (V g < 0), of metal/ultra-thin oxide/semiconductor (MOS) structures where the oxide thickness is 45 A. From the theoretical models of the literature we have shown that the modeling of oscillations c