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A loadless CMOS four-transistor SRAM cell in a 0.18-μm logic technology

✍ Scribed by Noda, K.; Matsui, K.; Takeda, K.; Nakamura, N.


Book ID
114538971
Publisher
IEEE
Year
2001
Tongue
English
Weight
134 KB
Volume
48
Category
Article
ISSN
0018-9383

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## Abstract This article proposes a dual‐resonance CMOS LC‐tank injection‐locked frequency doubler (ILFD) fabricated in the 0.18 μm CMOS process and describes the circuit design, operation principle, and measurement results of the ILFD. The ILFD circuit is composed of a dual‐resonance first‐harmoni