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A large-signal HSPICE model for the heterojunction bipolar transistor

✍ Scribed by Matsuno, C.T.; Sharma, A.K.; Oki, A.K.

Book ID
114551994
Publisher
IEEE
Year
1989
Tongue
English
Weight
366 KB
Volume
37
Category
Article
ISSN
0018-9480

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A model for abrupt double heterojunction
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## Abstract In this paper, we present a model for double heterojunction bipolar transistors (DHBTs) that takes into account Fermi–Dirac statistics as well as an arbitrary injection level. The most commonly used models in the literature for heterojunction bipolar transistors (HBTs), bipolar junction