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A High-Speed Deep-Trench MOSFET With a Self-Biased Split Gate

โœ Scribed by Qimeng Jiang; Minzhi Wang; Xingbi Chen

Book ID
114620053
Publisher
IEEE
Year
2010
Tongue
English
Weight
821 KB
Volume
57
Category
Article
ISSN
0018-9383

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An analytical model of fringing capacitances for deep-submicron MOSFET with high-k gate dielectric, including gate dielectric fringing-capacitance and gate electrode fringing-capacitance, is obtained by the conformal-mapping transformation method. It is demonstrated that the fringing-capacitance eff