Design of a 3–5-GHz ultrawideband BiFET
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Song Ruifeng; Liao Huailin; Huang Ru; Wang Yangyuan
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Article
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2007
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John Wiley and Sons
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English
⚖ 361 KB
## Abstract A fully integrated ultrawideband (UWB) bipolar cascode with metal oxide semiconductor field effect transistor (BiFET) mixer using standard commercial 0.35‐μm silicon germanium bipolar complementary metal oxide semiconductor technology was first proposed and fabricated in this study. Thi