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An 0.3-μm Si epitaxial base BiCMOS technology with 37-GHz fmax and 10-V BVceo for RF telecommunication

✍ Scribed by Nii, H.; Yoshino, C.; Yoshitomi, S.; Inoh, K.; Furuya, H.; Nakajima, H.; Sugaya, H.; Naruse, H.; Katsumata, Y.; Iwai, H.


Book ID
114537675
Publisher
IEEE
Year
1999
Tongue
English
Weight
458 KB
Volume
46
Category
Article
ISSN
0018-9383

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