A High linearity CMOS low noise amplifier for 3.66GHz applications using current-reused topology
✍ Scribed by Rastegar, Habib; Hakimi, Ahmad
- Book ID
- 122462183
- Publisher
- Elsevier Science
- Year
- 2013
- Tongue
- English
- Weight
- 805 KB
- Volume
- 44
- Category
- Article
- ISSN
- 0026-2692
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📜 SIMILAR VOLUMES
## Abstract In this article, we demonstrate a miniaturized high‐linearity (IIP3 = 8 dBm at 4 GHz) 3–5‐GHz ultrawideband low‐noise amplifier (LNA) implemented in a standard 0.18‐μm CMOS technology. The inductive‐series peaking technique was used to enhance the gain and bandwidth performances of the
## Abstract In this letter, a low‐voltage and low‐power 3.5‐GHz low noise amplifier (LNA) is designed and fabricated using TSMC 0.18‐μm MS/RF complementary metal‐oxide‐semiconductor field effect transistor (CMOS) technology. The complementary current‐reused topology is utilized to achieve low dc po