𝔖 Bobbio Scriptorium
✦   LIBER   ✦

A fully integrated low noise HEMT charge preamplifier

✍ Scribed by G. Bertuccio; G. De Geronimo; A. Longoni; S. Lauxtermann; K. Runge

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
356 KB
Volume
365
Category
Article
ISSN
0168-9002

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

A fully integrated concurrent dual-band
A fully integrated concurrent dual-band CMOS low-noise amplifier
✍ Y. P. Zhang; K. W. Chew; P. F. Wong; M. A. Do πŸ“‚ Article πŸ“… 2003 πŸ› John Wiley and Sons 🌐 English βš– 61 KB

## Abstract This paper presents a fully integrated concurrent dual‐band CMOS low‐noise amplifier (LNA). The LNA is implemented in a standard 0.18‐μm 6M1P CMOS process and is designed from the system viewpoint to provide higher gain at the higher band, for the first time, to compensate the higher‐ba

A fully integrated low voltage (0.5 V) X
A fully integrated low voltage (0.5 V) X-band CMOS low noise amplifier
✍ Baohong Liu; Jianjun Zhou; Junfa Mao πŸ“‚ Article πŸ“… 2010 πŸ› John Wiley and Sons 🌐 English βš– 180 KB

## Abstract In this article, a 0.5 V X‐band low noise amplifier (LNA) composed of two common‐source stages is designed and fabricated with 0.18 um CMOS technology.Based on the structure of cascaded common‐source stages and forward body bias technology, the supply voltage is reduced. Measurement res

Low noise broadband modulated preamplifi
Low noise broadband modulated preamplifiers for a variety of transducers
✍ Edith L.R. Corliss; William B. Penzes πŸ“‚ Article πŸ“… 1983 πŸ› Elsevier Science 🌐 English βš– 366 KB

Often, increases in signal-to-noise ratio and basic sensitivity are gained by the use of carrier modulation. Further advantage can be taken of this process by the use of varactors. These are suitably biased solid-state diodes and transistors, usually used to provide capacitance reactances. Their cap