✦ LIBER ✦

A distributed amplifier with 12.5-dB gain and 82.5-GHz bandwidth using 0.1 μm GaAs metamorphic HEMTs

✍ Scribed by Jinho Jeong; Sung-Won Kim; Wooyeol Choi; Kwang-Seok Seo; Youngwoo Kwon

Book ID: 102519788
Publisher: John Wiley and Sons
Year: 2007
Tongue: English
Weight: 189 KB
Volume: 49
Category: Article
ISSN: 0895-2477
DOI: 10.1002/mop.22844

No coin nor oath required. For personal study only.

✦ Synopsis

Abstract

In this letter, the monolithic distributed amplifier with active control scheme is presented, using 0.1 μm GaAs metamorphic HEMT technology, with a maximum operating frequency of 315 GHz. Active feedback resistor, which adjusts the negative resistance generated by the cascode gain cell, is employed to maximize the bandwidth of the entire distributed amplifier without oscillation. The measurement of the distributed amplifier with 5 cascode gain cells shows the gain of 12.5 ± 1.2 dB and 3‐dB bandwidth of 82.5 GHz corresponding to the ultrahigh gain‐bandwidth product of 347 GHz. Group delay variation is also measured to be less than ±8.9 ps up to 60 GHz. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 2873–2875, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22844

📜 SIMILAR VOLUMES

A 3.9-dB NF, 24.5-dB gain 0.3∼10.5-GHZ d

A 3.9-dB NF, 24.5-dB gain 0.3∼10.5-GHZ distributed amplifier using dual-inductive-peaking cascade gain cell for UWB systems in 0.18-μm CMOS

✍ Jin-Fa Chang; Yo-Sheng Lin 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 900 KB

## Abstract A high‐gain and low‐noise CMOS distributed amplifier (DA) is proposed.Flat and high S~21~ and flat and low NF was achieved simultaneously by using the proposed dual‐inductive‐peaking (L~D~ and L~P~) cascade gain cell, which constituted a cascode‐stage with a low‐Q RLC load and two induc

11.81 mW 3.1–10.6 GHz ultra-wideband low

11.81 mW 3.1–10.6 GHz ultra-wideband low-noise amplifier with 2.87 ± 0.19 dB noise figure and 12.52 ± 0.81 dB gain using 0.18 μm CMOS technology

✍ Chia-Hsing Wu; Yo-Sheng Lin; Chien-Chin Wang 📂 Article 📅 2012 🏛 John Wiley and Sons 🌐 English ⚖ 949 KB

Fabrication and performance of 0.1-μm ga

Fabrication and performance of 0.1-μm gate-length AlGaAs/GaAs HEMTs with unity current gain cutoff frequency in excess of 110 GHz

✍ Lepore, A.; Levy, M.; Lee, H.; Kohn, E.; Radulescu, D.; Tiberio, R.; Tasker, P.; 📂 Article 📅 1988 🏛 IEEE 🌐 English ⚖ 294 KB

A 0.6-V 1.6-mW transformer-based 2.5-GHz

A 0.6-V 1.6-mW transformer-based 2.5-GHz downconversion mixer with +5.4-dB gain and -2.8-dBm IIP3 in 0.13-μm CMOS

✍ Hermann, C.; Tiebout, M.; Klar, H. 📂 Article 📅 2005 🏛 IEEE 🌐 English ⚖ 880 KB