A 3.9-dB NF, 24.5-dB gain 0.3∼10.5-GHZ distributed amplifier using dual-inductive-peaking cascade gain cell for UWB systems in 0.18-μm CMOS
✍ Scribed by Jin-Fa Chang; Yo-Sheng Lin
- Publisher
- John Wiley and Sons
- Year
- 2011
- Tongue
- English
- Weight
- 900 KB
- Volume
- 53
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
A high‐gain and low‐noise CMOS distributed amplifier (DA) is proposed.Flat and high S~21~ and flat and low NF was achieved simultaneously by using the proposed dual‐inductive‐peaking (L~D~ and L~P~) cascade gain cell, which constituted a cascode‐stage with a low‐Q RLC load and two inductive‐peaking common‐source stages. At high‐gain mode, the two‐stage DA consumed 55.6 mW and achieved S~21~ of 24.5 ± 1.5 dB and an average NF of 3.9 dB over the frequency range of 0.3∼10.5 GHz, one of the best reported S~21~ and NF performances for a CMOS UWB DA in the literature. In addition, at low‐gain mode, the two‐stage DA consumed 16.3 mW and achieved flat and high S~21~ of 13.1 ± 1.5 dB with an average NF of 5.3 dB over the frequency range of 0.2∼10.8 GHz. The results indicate the proposed DA is suitable for variable gain amplifier or low‐noise amplifier in 3–10‐GHz UWB communication systems. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:2228–2232, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26260