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A detailed Raman study of porous silicon

✍ Scribed by H Münder; C Andrzejak; M.G Berger; U Klemradt; H Lüth; R Herino; M Ligeon

Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
584 KB
Volume
221
Category
Article
ISSN
0040-6090

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## Abstract In this paper, porous silicon (PS) layers of different porosity and thickness have been investigated by Raman spectroscopy. The estimation of built‐in strain in PS is reported. Moreover, wetting phenomena in PS layers have been also investigated. The results prove a reversible blue shif