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Drying of porous silicon: a Raman, electron microscopy, and photoluminescence study

✍ Scribed by G Amato; V Bullara; N Brunetto; L Boarino


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
960 KB
Volume
276
Category
Article
ISSN
0040-6090

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The e †ect of di †erent polarization orientations of the excitation source on the Raman and photoluminescence (PL) spectra of a porous silicon (PS) layer within two di †erent micro-regions was investigated. Two micro-regions (2 lm) along the (100) direction were studied, close to the crystalline sil