## Abstract This article presents a high‐efficiency GaN HEMT class‐F Doherty amplifier for 2.14‐GHz WCDMA applications. From the measured results, the proposed amplifier shows the PAE and drain efficiency of 56.3 and 60.1% at 39.5 dBm (6‐dB back‐off power from Psat) for a single tone. For a one‐car
A design method for highly efficient power amplifiers: Application to class F amplifiers
✍ Scribed by Duvanaud, C. ;Bouysse, P. ;Dietsche, S. ;Nebus, J. M. ;Paillot, J. M. ;Roques, D.
- Publisher
- John Wiley and Sons
- Year
- 1996
- Tongue
- English
- Weight
- 549 KB
- Volume
- 6
- Category
- Article
- ISSN
- 1050-1827
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