## Abstract In this article, a 5.8 GHz ISM‐band CMOS low noise amplifier (LNA) operating in a subthreshold region is presented. A conventional source degeneration inductor is eliminated for higher signal gain while providing reasonable input impedance. The LNA is fabricated using 130 nm CMOS techno
A design example of a 65 nm CMOS operational amplifier
✍ Scribed by Franz Schlögl; Horst Zimmermann
- Publisher
- John Wiley and Sons
- Year
- 2007
- Tongue
- English
- Weight
- 198 KB
- Volume
- 35
- Category
- Article
- ISSN
- 0098-9886
- DOI
- 10.1002/cta.401
No coin nor oath required. For personal study only.
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