A cross-sectional tem study of MOVPE grown CdHgTe
β Scribed by A. Nouruzi-Khorasani; I.P. Jones; P.S. Dobson; Y. Etem; D.J. Williams; M.G. Astles; C. Ard; G. Coates
- Publisher
- Elsevier Science
- Year
- 1990
- Tongue
- English
- Weight
- 367 KB
- Volume
- 102
- Category
- Article
- ISSN
- 0022-0248
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Quantum wells of the quaternary (GaIn)(NAs) alloy are grown compressively strained on GaAs by metal-organic vapor phase epitaxy (MOVPE) at low temperatures under non-equilibrium conditions. Growth experiments of particular heteroepitaxial multilayer systems are reported and the influence of varying
The ideal ion-milled transmission electron microscope (TEM) sample would contain large, thin areas in selected regions, minimal top and bottom surface amorphization, and minimal preferential etching of adjacent materials. This desire has led to studies of these effects and improvements in designs an