The experimental work on copper and copper-related defects in silicon is reviewed. The paper focuses on the physics of defect reactions and the formation of complexes with other impurities in silicon. As a fast interstitial diffuser, copper is still mobile at and below room temperature and has the a
β¦ LIBER β¦
A copper- and boron-related defect in silicon
β Scribed by J. Hage; H. Prigge; P. Wagner
- Publisher
- Springer
- Year
- 1990
- Tongue
- English
- Weight
- 672 KB
- Volume
- 50
- Category
- Article
- ISSN
- 1432-0630
No coin nor oath required. For personal study only.
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