## Abstract To study recombination at the amorphous/crystalline Si (aβSi:H/cβSi) heterointerface, the amphoteric nature of silicon (Si) dangling bonds is taken into account. Modeling interface recombination measured on various test structures provides insight into the microscopic passivation mechan
β¦ LIBER β¦
A computer-generated model of the crystalline/amorphous interface in silicon
β Scribed by F. Wooten; D. Weaire
- Book ID
- 115987148
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 263 KB
- Volume
- 114
- Category
- Article
- ISSN
- 0022-3093
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