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A computer controlled system for transient capacitance measurements of deep levels in semiconductor

✍ Scribed by Woon, H.S.; Tan, H.S.; Ng, S.C.

Book ID
114542688
Publisher
IEEE
Year
1988
Tongue
English
Weight
409 KB
Volume
37
Category
Article
ISSN
0018-9456

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## Abstract Deep centers in undoped n‐GaN grown by Hydride Vapor Phase Epitaxy were characterized by Deep Level Transient Spectroscopy (DLTS), revealing four known levels with activation energies in the range 0.17–0.94 eV. Deeper levels in the bandgap were observed by photocapacitance (PHCAP) exper