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A comparison of Pd Schottky contacts on InP, GaAs and Si

✍ Scribed by E. Hökelek; G.Y. Robinson


Publisher
Elsevier Science
Year
1981
Tongue
English
Weight
409 KB
Volume
24
Category
Article
ISSN
0038-1101

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On barrier height inhomogeneities of Au
✍ H. Çetin; E. Ayyildiz 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 258 KB

In this work, barrier height inhomogeneity and its origin are investigated for Au and Cu/n-InP metal/ semiconductor contacts. The effective barrier height values of the Au and Cu/n-InP Schottky barrier diodes (SBDs) have been obtained as 0.480 and 0.404 eV from current-voltage (I-V) characteristics