✦ LIBER ✦

A comparative study of vacancies produced by proton implantation of silicon using positron annihilation and deep level transient spectroscopy

✍ Scribed by M.A Lourenço; A.P Knights; K.P Homewood; R.M Gwilliam; P.J Simpson; P Mascher

Book ID: 114164571
Publisher: Elsevier Science
Year: 2001
Tongue: English
Weight: 69 KB
Volume: 175-177
Category: Article
ISSN: 0168-583X
DOI: 10.1016/s0168-583x(00)00640-6

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

The formation and evolution of vacancy-t

The formation and evolution of vacancy-type defects in Ar-implanted silicon studied by slow-positron annihilation spectroscopy

✍ B.S. Li; C.H. Zhang; Y.R. Zhong; D.N. Wang; L.H. Zhou; Y.T. Yang; H.H. Zhang; L. 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 254 KB

The Doppler broadening spectrum of a silicon wafer was measured using a variable-energy positron beam to investigate the effects of vacancy-type defects induced by 180 keV Ar ion implantation. The Sparameter in the damaged layer decreases with annealing temperature up to 673 K, and then increases wi

High resolution deep level transient spe

High resolution deep level transient spectroscopy studies of the vacancy-oxygen and related defects in ion-implanted silicon

✍ Evans-Freeman, J. H.; Kan, P. Y. Y.; Abdelgader, N. 📂 Article 📅 2002 🏛 American Institute of Physics 🌐 English ⚖ 249 KB

A comparative study of deep levels creat

A comparative study of deep levels created by low dose implantation of hydrogen, oxygen and silicon into MOCVD grown n-GaAs

✍ H.H Tan; J.S Williams; C Jagadish 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 499 KB

A study of grown-in impurities in silico

A study of grown-in impurities in silicon by deep-level transient spectroscopy : A. Rohatgi, J. R. Davis, R. H. Hopkins and P. G. Mcmullin. Solid-St. Electron.26 (11), 1039 (1983)

📂 Article 📅 1984 🏛 Elsevier Science 🌐 English ⚖ 132 KB