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A comparative study of the Kirk effect in GaAs and Si bipolar junction transistors

✍ Scribed by Joonwoo Lee; Bumman Kim; Youngsik Kim; Sungsoo Park

Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
434 KB
Volume
37
Category
Article
ISSN
0038-1101

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✍ Mukul K. Das; N. R. Das; P. K. Basu πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 217 KB

In this paper, the effects of Ge content and profile shape on the performance of a SiGe-based heterojunction bipolar transistor (HBT) are investigated. The common-emitter current gain, the early voltage, and the transit time of SiGe HBTs are calculated and computed for different Ge profiles as well