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Study of lateral non-uniformity as a function of junction depth in ultra-shallow junctions and its effect on leakage behavior in as-deposited polycrystalline Si and amorphous Si diodes

✍ Scribed by Shubneesh Batra; Kyle Picone; Keun Hyung Park; Suryanarayana Bhattacharya; Sanjay Banerjee; Jack Lee; Monte Manning; Chuck Dennison


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
1020 KB
Volume
36
Category
Article
ISSN
0038-1101

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