## Abstract InGaN multiple quantum well (MQW) structures with AlGaN and AlInGaN barriers were grown on sapphire by metalorganic vapour phase epitaxy (MOVPE). The high resolution Xβray diffraction (HRXRD) and transmission electron microscopy (TEM) characterisation results show substantial improvemen
β¦ LIBER β¦
A comparative study of InAs quantum dot lasers with barriers of direct and indirect band gaps
β Scribed by G. Sun; Richard A. Soref; Jacob B. Khurgin
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 139 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0026-2692
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SO 2 spectra have been recorded with a quantum cascade laser spectrometer at 9 mm. Line positions, line strengths and self-broadening coefficients of 42 lines have been precisely determined. All these parameters have shown some discrepancies with those of the HITRAN database. Moreover several lines