A comparative study of near-UV emitting InGaN quantum wells with AlGaN and AlInGaN barriers
✍ Scribed by Zhu, D. ;Kappers, M. J. ;Costa, P. M. F. J. ;McAleese, C. ;Rayment, F. D. G. ;Chabrol, G. R. ;Graham, D. M. ;Dawson, P. ;Thrush, E. J. ;Mullins, J. T. ;Humphreys, C. J.
- Publisher
- John Wiley and Sons
- Year
- 2006
- Tongue
- English
- Weight
- 227 KB
- Volume
- 203
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
Abstract
InGaN multiple quantum well (MQW) structures with AlGaN and AlInGaN barriers were grown on sapphire by metalorganic vapour phase epitaxy (MOVPE). The high resolution X‐ray diffraction (HRXRD) and transmission electron microscopy (TEM) characterisation results show substantial improvements in the material quality by introducing a small amount of indium into the AlGaN barriers, resulting in improved optical properties, as indicated by low‐temperature (6 K) photoluminescence (LT‐PL) spectroscopy. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)