A novel model for the simulation of the microwave power capabilities of HBTs is presented. The model is based on physical analytical formulation of the terminal currents as functions of the base-emitter and base-collector voltages. It takes into account the unequal thermal distribution of temperatur
β¦ LIBER β¦
A compact HBT device model based on a one-flux treatment of carrier transport
β Scribed by Shin-ichi Tanaka; M.S. Lundstrom
- Book ID
- 103394988
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 889 KB
- Volume
- 37
- Category
- Article
- ISSN
- 0038-1101
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