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A class-E power amplifier based on an extended resonance technique

✍ Scribed by Martin, A.L.; Mortazawi, A.

Book ID
114553642
Publisher
IEEE
Year
2000
Tongue
English
Weight
123 KB
Volume
48
Category
Article
ISSN
0018-9480

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Highly efficient LDMOS power amplifier b
Highly efficient LDMOS power amplifier based on class-E topology
✍ Jongwoo Lee; Sungwoo Kim; Jungjin Nam; Jangheon Kim; Ildu Kim; Bumman Kim πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 120 KB

## Abstract This paper describes a highly efficient class‐E power amplifier. The design has been carried out at 1 GHz using a LDMOS transistor with 10 W of peak envelope power (PEP). Drain efficiency of 76.1%, power‐added efficiency (PAE) of 73.6%, and gain of 14.8 dB are achieved at an output powe