A High Efficiency Broadband Class-E Power Amplifier Using a Reactance Compensation Technique
β Scribed by Chi-Hsien Lin; Hong-Yeh Chang
- Book ID
- 115499449
- Publisher
- IEEE
- Year
- 2010
- Tongue
- English
- Weight
- 273 KB
- Volume
- 20
- Category
- Article
- ISSN
- 1531-1309
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
## Abstract This article reports a high efficiency classβE power amplifier using a SiC MESFET, which is designed and tested at 2.14 GHz. To improve output power and efficiency by suppressing harmonic powers, an output matching circuit using the transmission lines is used. From measured results for
## Abstract The design methodology and measured performance of a broadband UHF classβF power amplifier is presented and compared to that of a typical narrowband classβF design. The realized broadband circuit achieves 65% of powerβadded efficiency with 21 Β± 0.5βdBm output power from 575 to 915 MHz,
## Abstract Based on a Silicon carbide (SiC) MetalβSemiconductor Field Effects Transistor (MESFET), a broadband VHF SiC classβE high power amplifier is implemented by using a Οβtransform output load network. Experimental results show that drain efficiency greater than 60% is achieved over a frequen