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A 60-GHz LNA with 18.6-dB gain and 5.7-dB NF in 90-nm CMOS

✍ Scribed by Kai Kang; James Brinkhoff; Fujiang Lin

Book ID
102522054
Publisher
John Wiley and Sons
Year
2010
Tongue
English
Weight
198 KB
Volume
52
Category
Article
ISSN
0895-2477

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✦ Synopsis

Abstract

A 60‐GHz low‐noise amplifier (LNA) is implemented in a commercial 90‐nm RF CMOS process. A scalable model based on electromagnetic simulation is adopted to model on‐chip microstrip transmission lines. First‐pass silicon success has been achieved by accurate modeling of passive and active devices and careful layout. The three‐stage LNA achieves 18.6‐dB gain, a noise figure of 5.7 dB, and an input P~1dB~ of −14.8 dBm. It consumes 24 mA from a 1.2‐V supply. The total LNA die area with pads is 1.4 × 0.5 mm^2^. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 2056–2059, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25379

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