A DC to 30-GHz ultra-wideband CMOS T/R s
β
Mou Shouxian; Ma Kaixue; Yeo Kiat Seng
π
Article
π
2011
π
John Wiley and Sons
π
English
β 269 KB
## Abstract A DC to 30βGHz ultraβwideband T/R switch based on a 0.18βΞΌm SiGe process using only CMOS components is implemented. The switch with 1.5β to 3.3βdB insertion loss and 20β to 80βdB isolation achieves wideband onβchip impedance matching. Besides Vdd/ground, no extra biasing or control volt