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A DC to 30-GHz ultra-wideband CMOS T/R switch

✍ Scribed by Mou Shouxian; Ma Kaixue; Yeo Kiat Seng


Publisher
John Wiley and Sons
Year
2011
Tongue
English
Weight
269 KB
Volume
53
Category
Article
ISSN
0895-2477

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✦ Synopsis


Abstract

A DC to 30‐GHz ultra‐wideband T/R switch based on a 0.18‐μm SiGe process using only CMOS components is implemented. The switch with 1.5‐ to 3.3‐dB insertion loss and 20‐ to 80‐dB isolation achieves wideband on‐chip impedance matching. Besides Vdd/ground, no extra biasing or control voltage level is required in this 0.05‐mm^2^ switch. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26217


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