## Abstract A 3–10 GHz broadband CMOS T/R Switch for ultra‐wideband (UWB) transceiver is proposed. This broadband CMOS transmit/receive (T/R) Switch is fabricated based on the 0.18 μm 1P6M standard CMOS process. On‐chip measurement of the CMOS T/R Switch is performed. The insertion loss of the prop
A DC to 30-GHz ultra-wideband CMOS T/R switch
✍ Scribed by Mou Shouxian; Ma Kaixue; Yeo Kiat Seng
- Publisher
- John Wiley and Sons
- Year
- 2011
- Tongue
- English
- Weight
- 269 KB
- Volume
- 53
- Category
- Article
- ISSN
- 0895-2477
No coin nor oath required. For personal study only.
✦ Synopsis
Abstract
A DC to 30‐GHz ultra‐wideband T/R switch based on a 0.18‐μm SiGe process using only CMOS components is implemented. The switch with 1.5‐ to 3.3‐dB insertion loss and 20‐ to 80‐dB isolation achieves wideband on‐chip impedance matching. Besides Vdd/ground, no extra biasing or control voltage level is required in this 0.05‐mm^2^ switch. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26217
📜 SIMILAR VOLUMES
## Abstract This article presents the design and the measurement results of a 3‐to 5‐GHz down‐converter fabricated in a 90‐nm CMOS technology. The circuit consists of a single‐ended low‐noise amplifier and two I/Q double‐balanced mixers. A transformer‐based on‐chip single‐ended‐to‐differential conv