0.35 μm CMOS T/R Switch for 2.4 GHz Short Range Wireless Applications
✍ Scribed by Christian Hove; Janus Lysholm Faaborg; Michael Bohl Jenner; Saska Lindfors
- Book ID
- 111554227
- Publisher
- Springer
- Year
- 2004
- Tongue
- English
- Weight
- 399 KB
- Volume
- 38
- Category
- Article
- ISSN
- 0925-1030
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## Abstract A concurrent 2.4/5.2‐GHz dual‐band monolithic low‐noise amplifier implemented with a 0.18‐μm mixed‐signal CMOS technology is reported for the first time. This LNA only consumed 3‐mW power, and achieved minimum noise figures of 3.3 and 3.26 dB and 2.4 and 5.2 GHz, respectively. Input and
In this paper, a 4.2-5.4 GHz, ÀGm LC voltage controlled oscillator (VCO) for IEEE 802.11a standard is presented. The circuit is designed with AMS 0.35 lm SiGe BiCMOS process that includes high-speed SiGe Heterojunction Bipolar Transistors (HBTs). According to post-layout simulation results, phase no