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A 2.6-GHz fully integrated CMOS power amplifier using power-combining transformer

✍ Scribed by Hwann-Kaeo Chiou; Hsien-Yuan Liao; Chien-Chung Chen; Shih-Ming Wang; Cheng-Chung Chen

Publisher
John Wiley and Sons
Year
2010
Tongue
English
Weight
257 KB
Volume
52
Category
Article
ISSN
0895-2477

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✦ Synopsis

Abstract

A 2.6‐GHz power amplifier was implemented with a 0.18 μm RF CMOS process. The matching networks were fully integrated without any external components. To increase the output power, the power combining technique was adopted and realized by a 2:1 on‐chip transformer, which was designed to provide an optimum load for the power cell. The measured efficiency of this power combining transformer is about 75% at 2.6 GHz. The proposed power amplifier exhibits maximum output power of 26.7 dBm with power‐added efficiency of 18.1%. The power gain is 13.6 dB under 3.3 V supply voltage. Moreover, this letter shows good agreement between simulated and measured results. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 299–302, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24910

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