## Abstract A 2.6βGHz power amplifier was implemented with a 0.18 ΞΌm RF CMOS process. The matching networks were fully integrated without any external components. To increase the output power, the power combining technique was adopted and realized by a 2:1 onβchip transformer, which was designed to
A 1.9-GHz CMOS power amplifier using an interdigitated transmission line transformer
β Scribed by Changkun Park; Sang-Hyun Baek; Bon-Hyun Ku; Songcheol Hong
- Publisher
- John Wiley and Sons
- Year
- 2007
- Tongue
- English
- Weight
- 200 KB
- Volume
- 49
- Category
- Article
- ISSN
- 0895-2477
No coin nor oath required. For personal study only.
β¦ Synopsis
Abstract
A 1.9βGHz CMOS differential power amplifier for polar transmitter applications is designed using a 0.25βΞΌm RF CMOS process. The input transformer and output transformer are fully integrated on the chip. The transmission line transformer is used as an output power combiner and an output matching component. To increase the coupling factor of the transformer, an interdigitated transmission line transformer is used and it achieves a drain efficiency of 28% at the maximum output power. The maximum output power is 28.2 dBm with a 1.8βV supply voltage. Β© 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 3162β3166, 2007; Published online in Wiley InterScience (www.interscience.wiley.com).DOI 10.1002/mop.22957
π SIMILAR VOLUMES
## Abstract This letter presents a design methodology for the millimeter wave amplifier using 90βnm Taiwan Semiconductor Manufacture Company (TSMC) CMOS technology. The proposed design scheme with mathematically modeled transmission lines and interstage matching transformers illustrates how to desi