## Abstract A 2.6‐GHz power amplifier was implemented with a 0.18 μm RF CMOS process. The matching networks were fully integrated without any external components. To increase the output power, the power combining technique was adopted and realized by a 2:1 on‐chip transformer, which was designed to
The fully-integrated CMOS RF power amplifier using the semilumped transformer
✍ Scribed by Boshi Jin; Kichon Han; Jinsung Choi; Daehyun Kang; Bumman Kim
- Publisher
- John Wiley and Sons
- Year
- 2008
- Tongue
- English
- Weight
- 747 KB
- Volume
- 50
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
A semilumped output transformer for fully‐integrated RF CMOS power amplifier is proposed in this paper. To demonstrate this transformer, a 2.5‐GHz CMOS power amplifier is implemented with a 0.18‐μm RF CMOS process used for WiMAX application. The power amplifier can achieve 39% PAE (power added efficiency) at P1dB (1 dB compression point) and output power of 30 dBm. The linearity can satisfy the spectrum mask of the WiMAX signal requirement basically. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2857–2860, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23811
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