Simulation of a NDRO memory cell with ve
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D. Drung; W. Jutzi
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Article
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1984
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Elsevier Science
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English
β 436 KB
The dynamic behaviour of a single flux quantum NDRO interferometer cell with two very small excess current Josephson junctions is simulated for a clamping impedance parallel to the interferometer inductance. A proper design of the clamping impedance yields the required NDRO and written operations at