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Simulation of a NDRO memory cell with very small excess current Josephson junctions

✍ Scribed by D. Drung; W. Jutzi


Publisher
Elsevier Science
Year
1984
Tongue
English
Weight
436 KB
Volume
24
Category
Article
ISSN
0011-2275

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✦ Synopsis


The dynamic behaviour of a single flux quantum NDRO interferometer cell with two very small excess current Josephson junctions is simulated for a clamping impedance parallel to the interferometer inductance. A proper design of the clamping impedance yields the required NDRO and written operations at large damping parameters/J > 1000 of the Josephson junction~ Since large damping parameters are required for logic circuits the proposed NDRO memory cell and logic circuits can now be implemented w/th the same fabrication process.