Simulation of a NDRO memory cell with ve
โ
D. Drung; W. Jutzi
๐
Article
๐
1984
๐
Elsevier Science
๐
English
โ 436 KB
The dynamic behaviour of a single flux quantum NDRO interferometer cell with two very small excess current Josephson junctions is simulated for a clamping impedance parallel to the interferometer inductance. A proper design of the clamping impedance yields the required NDRO and written operations at