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A 11-Transistor Nanoscale CMOS Memory Cell for Hardening to Soft Errors

✍ Scribed by Sheng Lin; Yong-Bin Kim; Lombardi, F.

Book ID: 118272692
Publisher: IEEE
Year: 2011
Tongue: English
Weight: 502 KB
Volume: 19
Category: Article
ISSN: 1063-8210
DOI: 10.1109/tvlsi.2010.2043271

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