54 Model of the epitaxial chemical vapor deposition reactor for design and performance optimization
✍ Scribed by J. Jůza; J. Čermák
- Publisher
- Elsevier Science
- Year
- 1980
- Tongue
- English
- Weight
- 554 KB
- Volume
- 35
- Category
- Article
- ISSN
- 0009-2509
No coin nor oath required. For personal study only.
✦ Synopsis
lode1 of the epltaxlal chemical vanor denosltlon reactor 1s develoved based on fundamental physlcochemlcal nrlnclqles. Kknetrcs of the heterogeneous denosltlon reactlon 1s taken Into account slmultaneouslv with transnort nhenomena which occur In the gas nhase above denosltlon surface. Obtalned set of Fartlal dlfferentlal ecuatlons 1s solved numerlcallv, the results being compared with renresentative set of exoerlmental data and with orevlouslv "ubllshed models. The comnarlson has demonstrated the sultabllrty of the model for nrocess design nurnoses.
📜 SIMILAR VOLUMES
When a carrier gas is passed through a gas saturator at temperature To containing liquid or solid reagent under conditions leading to its saturation with an equilibrium vapor pressure p"of the reagent, and then into a tube where the exit stream temperature is increased to r,, the downstream,partial