✦ LIBER ✦

4H-SiC MESFET with 2.8 W/mm power density at 1.8 GHz

✍ Scribed by Weitzel, C.E.; Palmour, J.W.; Carter, C.H.; Nordquist, K.J.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

IIA-8 multiple HEMT with 1-W/mm power de

✍ Saunier, P.; Lee, J.W. 📂 Article 📅 1987 🏛 IEEE 🌐 English ⚖ 315 KB

1-mm gate periphery AlGaN/AlN/GaN HEMTs

✍ X.L. Wang; T.S. Cheng; Z.Y. Ma; G.X. Hu; H.L. Xiao; J.X. Ran; C.M. Wang; W.J. Lu 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 562 KB

InAlN/GaN HEMTs on Sapphire Substrate Wi

✍ Lecourt, F.; Ketteniss, N.; Behmenburg, H.; Defrance, N.; Hoel, V.; Eickelkamp, 📂 Article 📅 2011 🏛 IEEE 🌐 English ⚖ 129 KB

AlGaN∕GaN HEMTs on Si substrate with 7 W

✍ Dumka, D.C.; Lee, C.; Tserng, H.Q.; Saunier, P.; Kumar, M. 📂 Article 📅 2004 🏛 The Institution of Electrical Engineers 🌐 English ⚖ 208 KB

AlGaN–GaN HEMTs on Si With Power D

✍ Minko, A.; Hoel, V.; Morvan, E.; Grimbert, B.; Soltani, A.; Delos, E.; Ducatteau 📂 Article 📅 2004 🏛 IEEE 🌐 English ⚖ 128 KB

AlGaN/GaN HEMTs on (001) Silicon Substra

✍ Gerbedoen, J.-C.; Soltani, A.; Joblot, S.; De Jaeger, J.-C.; Gaquiere, C.; Cordi 📂 Article 📅 2010 🏛 IEEE 🌐 English ⚖ 471 KB