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3.16 Properties of sputtered Ge thin films on GaAs substrates

✍ Scribed by B Rybka

Publisher
Elsevier Science
Year
1967
Tongue
English
Weight
164 KB
Volume
17
Category
Article
ISSN
0042-207X

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Growth and electrical properties of epitaxial CuInS2 thin films on GaAs substrates
✍ Doz. Dr. sc. H. Neumann; Dr. B. Schumann; Dipl.-Phys. D. Peters; Dr. A. Tempel; πŸ“‚ Article πŸ“… 1979 πŸ› John Wiley and Sons 🌐 English βš– 872 KB

A-oriented GaAs substrates by flash evaporation in the substrate temperature range Tsub = 570 ... 870 K. Epitaxialgrowth begins at Tsub = 645 K. The films had always the chalcopyrite structure. Indications to a transition from the chalcopyrite phase to the sphalerite phase were observed at Tsub = 87