## Abstract A 1–11 GHz wideband low‐noise amplifier (LNA) with good phase linearity properties (group‐delay variation is only ±35.56 ps across the 3.1–10.6 GHz band of interest) using standard 0.18 μm CMOS technology is reported. To enhance the bandwidth for achieving both high and flat gain and sm
3–10 GHz low-power, low-noise CMOS distributed amplifier using splitting-load inductive peaking and noise-suppression techniques
✍ Scribed by Chang, J.-F.; Lin, Y.-S.
- Book ID
- 115507773
- Publisher
- The Institution of Electrical Engineers
- Year
- 2009
- Tongue
- English
- Weight
- 203 KB
- Volume
- 45
- Category
- Article
- ISSN
- 0013-5194
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## Abstract In this article, a small‐sized 3–10 GHz CMOS LNA for ultra‐wideband (UWB) applications is presented. To reduce 2 on‐chip inductors, wire bond inductors are used instead of input inductor of multisectional reactive network and source degeneration inductor. The noise figure of low‐noise a
## Abstract An ultra‐wideband 3.1–10.6‐GHz low noise amplifier (LNA) adopting inductive peaking technique for bandwidth extension is presented. Fabricated in a 0.18‐μm CMOS process, the proposed circuit can both satisfy the maximum bandwidth and the maximally flat response. The feedback resistor pr