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2DEG HEMT Mobility vs Inversion Channel MOSFET Mobility

✍ Scribed by Pérez-Tomás, Amador; Placidi, Marcel; Baron, N.; Chenot, Sébastien; Cordier, Yvon; Moreno, J.C.; Millán, José; Godignon, Phillippe

Book ID
121864163
Publisher
Trans Tech Publications, Ltd.
Year
2010
Tongue
English
Weight
282 KB
Volume
645-648
Category
Article
ISSN
1662-9752

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Split C-V measurements of low temperatur
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✍ G.Sh. Gildenblat; C.-L. Huang; N.D. Arora 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 365 KB

A combination of the high frequency split C-V method and numerical modelling was used to accurately measure the effective mobility of electrons in the inversion layer as a function of the inversion layer charge, O~, bulk charge, Oh, and temperature. These measurements clearly show that for a suffici