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A new technique for measuring MOSFET inversion layer mobility

โœ Scribed by Huang, C.-L.; Faricelli, J.V.; Arora, N.D.


Book ID
114535142
Publisher
IEEE
Year
1993
Tongue
English
Weight
520 KB
Volume
40
Category
Article
ISSN
0018-9383

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Split C-V measurements of low temperatur
โœ G.Sh. Gildenblat; C.-L. Huang; N.D. Arora ๐Ÿ“‚ Article ๐Ÿ“… 1989 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 365 KB

A combination of the high frequency split C-V method and numerical modelling was used to accurately measure the effective mobility of electrons in the inversion layer as a function of the inversion layer charge, O~, bulk charge, Oh, and temperature. These measurements clearly show that for a suffici