Hole emission from single and vertically coupled quantum dots (SQD and VCQD) in InAs/GaAs p-n heterostructures under varied reverse bias and the influence exerted on this process by the Coulomb interaction between the quantum dots and point defects situated near the dots has been studied by capacita
✦ LIBER ✦
2D–3D transitions in the quantum Stark effect in self-assembled InAs/GaAs quantum dots
✍ Scribed by Weidong Sheng; Jean-Pierre Leburton
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 237 KB
- Volume
- 17
- Category
- Article
- ISSN
- 1386-9477
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