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20 nm electron beam lithography and reactive ion etching for the fabrication of double gate FinFET devices

✍ Scribed by J. Kretz; L. Dreeskornfeld; J. Hartwich; W. Rösner

Book ID
114155575
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
970 KB
Volume
67-68
Category
Article
ISSN
0167-9317

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