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2 MeV Si ion implantation damage in relaxed Si1−xGex

✍ Scribed by C. O'Raifeartaigh; R.C. Barklie; A. Nylandsted Larsen; F. Priolo; G. Franzó; G. Lulli; M. Bianconi; J.K.N. Lindner; F. Cristiano; P.L.F. Hemment

Book ID: 114168414
Publisher: Elsevier Science
Year: 1996
Tongue: English
Weight: 386 KB
Volume: 120
Category: Article
ISSN: 0168-583X
DOI: 10.1016/s0168-583x(96)00501-0

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