𝔖 Bobbio Scriptorium

✦ LIBER ✦

14xx-nm High Brightness Tapered Diode Lasers Grown by Solid-Source MBE

✍ Scribed by Kallenbach, S.; Aidam, R.; Losch, R.; Kaufel, G.; Kelemen, M.T.; Mikulla, M.; Weimann, G.

Book ID: 119802686
Publisher: IEEE
Year: 2006
Tongue: English
Weight: 115 KB
Volume: 18
Category: Article
ISSN: 1041-1135
DOI: 10.1109/lpt.2006.870124

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Low threshold GaInAs quantum well lasers

Low threshold GaInAs quantum well lasers grown under low growth rate by solid-source MBE for 1200 nm wavelength range

✍ M. Ohta; T. Miyamoto; T. Matsuura; Y. Matsui; T. Furuhata; T. Iwasaki; Y. Kashih 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 268 KB

High-performance 980-nm strained-layer G

High-performance 980-nm strained-layer GaInAs-GaInAsP-GaInP quantum-well lasers grown by all solid-source molecular-beam epitaxy

✍ Savolainen, P.; Toivonen, M.; Asonen, H.; Pessa, M.; Murison, R. 📂 Article 📅 1996 🏛 IEEE 🌐 English ⚖ 285 KB

[IEEE Conference Proceedings. 2001 Inter

[IEEE Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM - Nara, Japan (14-18 May 2001)] Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) - A comparison of deep level effects on the DC characteristics of In/sub x/Ga/sub 1-x/P/In/sub 0.20/Ga/sub 0.80/As/GaAs and Al/sub 0.24/Ga/sub 0.76/As/In/sub 0.20/Ga/sub 0.80/As/GaAs high electron mobility transistors grown by solid source MBE

✍ Yoon, S.F.; Yip, K.H.; Zheng, H.Q.; Gay, B.P. 📂 Article 📅 2001 🏛 IEEE ⚖ 392 KB