High-performance 980-nm strained-layer GaInAs-GaInAsP-GaInP quantum-well lasers grown by all solid-source molecular-beam epitaxy

✍ Scribed by Savolainen, P.; Toivonen, M.; Asonen, H.; Pessa, M.; Murison, R.

• Book ID: 119785523
• Publisher: IEEE
• Year: 1996
• Tongue: English
• Weight: 285 KB
• Volume: 8
• Category: Article
• ISSN: 1041-1135
• DOI: 10.1109/68.508712