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1.2 kV trench insulated gate bipolar transistors (IGBT's) with ultralow on-resistance

✍ Scribed by Udrea, F.; Chan, S.S.M.; Thomson, J.; Trajkovic, T.; Waind, P.R.; Amaratunga, G.A.J.; Crees, D.E.

Book ID: 111886149
Publisher: IEEE
Year: 1999
Tongue: English
Weight: 702 KB
Volume: 20
Category: Article
ISSN: 0741-3106
DOI: 10.1109/55.778166

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